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FS75R12W2T4 Datasheet(PDF) 2 Page - Infineon Technologies AG

Part # FS75R12W2T4
Description  EasyPACK module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT / NTC
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

FS75R12W2T4 Datasheet(HTML) 2 Page - Infineon Technologies AG

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Technische Information / technical information
FS75R12W2T4
IGBT-Module
IGBT-modules
prepared by: DK
approved by: MB
date of publication: 2009-10-30
revision: 2.3
Vorläufige Daten
preliminary data
IGBT-Wechselrichter / IGBT-inverter
Höchstzulässige Werte / maximum rated values
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
TÝÎ = 25°C
V†Š»
1200
V
Kollektor-Dauergleichstrom
DC-collector current
T† = 95°C, TÝÎ = 175°C
T† = 25°C, TÝÎ = 175°C
I† ÒÓÑ
I†
75
107
A
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t« = 1 ms
I†ç¢
150
A
Gesamt-Verlustleistung
total power dissipation
T† = 25°C, TÝÎ = 175°C
PÚÓÚ
375
W
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V•Š»
+/-20
V
Charakteristische Werte / characteristic values
min.
typ.
max.
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
I† = 75 A, V•Š = 15 V
I† = 75 A, V•Š = 15 V
I† = 75 A, V•Š = 15 V
V†Š ÙÈÚ
1,85
2,15
2,25
2,15
V
V
V
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
Gate-Schwellenspannung
gate threshold voltage
I† = 2,40 mA, V†Š = V•Š, TÝÎ = 25°C
V•ŠÚÌ
5,2
5,8
6,4
V
Gateladung
gate charge
V•Š = -15 V ... +15 V
Q•
0,57
C
Interner Gatewiderstand
internal gate resistor
TÝÎ = 25°C
R•ÍÒÚ
10
Â
Eingangskapazität
input capacitance
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V
CÍþÙ
4,30
nF
Rückwirkungskapazität
reverse transfer capacitance
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V
CØþÙ
0,16
nF
Kollektor-Emitter Reststrom
collector-emitter cut-off current
V†Š = 1200 V, V•Š = 0 V, TÝÎ = 25°C
I†Š»
1,0
mA
Gate-Emitter Reststrom
gate-emitter leakage current
V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C
I•Š»
100
nA
Einschaltverzögerungszeit (ind. Last)
turn-on delay time (inductive load)
I† = 75 A, V†Š = 600 V
V•Š = ±15 V
R•ÓÒ = 2,2 Â
tÁ ÓÒ
0,13
0,15
0,15
s
s
s
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
Anstiegszeit (induktive Last)
rise time (inductive load)
I† = 75 A, V†Š = 600 V
V•Š = ±15 V
R•ÓÒ = 2,2 Â
0,02
0,03
0,035
s
s
s
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
Abschaltverzögerungszeit (ind. Last)
turn-off delay time (inductive load)
I† = 75 A, V†Š = 600 V
V•Š = ±15 V
R•ÓËË = 2,2 Â
tÁ ÓËË
0,30
0,38
0,40
s
s
s
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
Fallzeit (induktive Last)
fall time (inductive load)
I† = 75 A, V†Š = 600 V
V•Š = ±15 V
R•ÓËË = 2,2 Â
0,045
0,08
0,09
s
s
s
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
I† = 75 A, V†Š = 600 V, L» = 25 nH
V•Š = ±15 V, di/dt = 2800 A/ s (TÝÎ=150°C)
R•ÓÒ = 2,2 Â
EÓÒ
4,70
7,20
8,00
mJ
mJ
mJ
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
I† = 75 A, V†Š = 600 V, L» = 25 nH
V•Š = ±15 V, du/dt = 3800 V/ s (TÝÎ=150°C)
R•ÓËË = 2,2 Â
EÓËË
3,90
6,10
6,40
mJ
mJ
mJ
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
Kurzschlussverhalten
SC data
V•Š ù 15 V, V†† = 800 V
V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt
IȠ
270
A
TÝÎ = 150°C
t« ù 10 s,
Innerer Wärmewiderstand
thermal resistance, junction to case
pro IGBT / per IGBT
RÚÌœ†
0,35
0,40
K/W
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro IGBT / per IGBT
ð«ÈÙÚþ = 1 W/(m·K) /
ðÃØþÈÙþ = 1 W/(m·K)
RÚ̆™
0,60
K/W


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