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FS75R12W2T4 Datasheet(PDF) 6 Page - Infineon Technologies AG

Part # FS75R12W2T4
Description  EasyPACK module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT / NTC
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

FS75R12W2T4 Datasheet(HTML) 6 Page - Infineon Technologies AG

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Technische Information / technical information
FS75R12W2T4
IGBT-Module
IGBT-modules
prepared by: DK
approved by: MB
date of publication: 2009-10-30
revision: 2.3
Vorläufige Daten
preliminary data
Schaltverluste IGBT-Wechselr. (typisch)
Schaltverluste IGBT-Wechselr. (typisch)
Schaltverluste IGBT-Wechselr. (typisch)
Schaltverluste IGBT-Wechselr. (typisch)
switching losses IGBT-Inverter (typical)
switching losses IGBT-Inverter (typical)
switching losses IGBT-Inverter (typical)
switching losses IGBT-Inverter (typical)
EÓÒ = f (R•), EÓËË = f (R•)
EÓÒ = f (R•), EÓËË = f (R•)
EÓÒ = f (R•), EÓËË = f (R•)
EÓÒ = f (R•), EÓËË = f (R•)
V•Š = ±15 V, I† = 75 A, V†Š = 600 V
V•Š = ±15 V, I† = 75 A, V†Š = 600 V
V•Š = ±15 V, I† = 75 A, V†Š = 600 V
V•Š = ±15 V, I† = 75 A, V†Š = 600 V
R• [Â]
0
2
4
6
8 10 12 14 16 18 20
0
2
4
6
8
10
12
14
16
18
20
EÓÒ, TÝÎ = 125°C
EÓËË, TÝÎ = 125°C
EÓÒ, TÝÎ = 150°C
EÓËË, TÝÎ = 150°C
Transienter Wärmewiderstand IGBT-Wechselr.
Transienter Wärmewiderstand IGBT-Wechselr.
Transienter Wärmewiderstand IGBT-Wechselr.
Transienter Wärmewiderstand IGBT-Wechselr.
transient thermal impedance IGBT-inverter
transient thermal impedance IGBT-inverter
transient thermal impedance IGBT-inverter
transient thermal impedance IGBT-inverter
ZÚÌœ™ = f (t)
ZÚÌœ™ = f (t)
ZÚÌœ™ = f (t)
ZÚÌœ™ = f (t)
t [s]
0,001
0,01
0,1
1
10
0,01
0,1
1
10
ZÚÌœ™ : IGBT
i:
rÍ[K/W]:
Í[s]:
1
0,032
0,0005
2
0,062
0,005
3
0,312
0,05
4
0,543
0,2
τ
Sicherer Rückwärts-Arbeitsbereich IGBT-Wr. (RBSOA)
Sicherer Rückwärts-Arbeitsbereich IGBT-Wr. (RBSOA)
Sicherer Rückwärts-Arbeitsbereich IGBT-Wr. (RBSOA)
Sicherer Rückwärts-Arbeitsbereich IGBT-Wr. (RBSOA)
reverse bias safe operating area IGBT-inv. (RBSOA)
reverse bias safe operating area IGBT-inv. (RBSOA)
reverse bias safe operating area IGBT-inv. (RBSOA)
reverse bias safe operating area IGBT-inv. (RBSOA)
I† = f (V†Š)
I† = f (V†Š)
I† = f (V†Š)
I† = f (V†Š)
V•Š = ±15 V, R•ÓËË = 2.2 Â, TÝÎ = 150°C
V•Š = ±15 V, R•ÓËË = 2.2 Â, TÝÎ = 150°C
V•Š = ±15 V, R•ÓËË = 2.2 Â, TÝÎ = 150°C
V•Š = ±15 V, R•ÓËË = 2.2 Â, TÝÎ = 150°C
V†Š [V]
0
200
400
600
800 1000 1200 1400
0
15
30
45
60
75
90
105
120
135
150
165
I†, Modul
I†, Chip
Durchlasskennlinie der Diode-Wechselr. (typisch)
Durchlasskennlinie der Diode-Wechselr. (typisch)
Durchlasskennlinie der Diode-Wechselr. (typisch)
Durchlasskennlinie der Diode-Wechselr. (typisch)
forward characteristic of diode-inverter (typical)
forward characteristic of diode-inverter (typical)
forward characteristic of diode-inverter (typical)
forward characteristic of diode-inverter (typical)
IŒ = f (VŒ)
IŒ = f (VŒ)
IŒ = f (VŒ)
IŒ = f (VŒ)
VΠ[V]
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4
0
15
30
45
60
75
90
105
120
135
150
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C


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