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FS75R12W2T4 Datasheet(PDF) 3 Page - Infineon Technologies AG

Part # FS75R12W2T4
Description  EasyPACK module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT / NTC
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

FS75R12W2T4 Datasheet(HTML) 3 Page - Infineon Technologies AG

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Technische Information / technical information
FS75R12W2T4
IGBT-Module
IGBT-modules
prepared by: DK
approved by: MB
date of publication: 2009-10-30
revision: 2.3
Vorläufige Daten
preliminary data
Diode-Wechselrichter / diode-inverter
Höchstzulässige Werte / maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltage
TÝÎ = 25°C
Vçç¢
1200
V
Dauergleichstrom
DC forward current
75
A
Periodischer Spitzenstrom
repetitive peak forward current
t« = 1 ms
IŒç¢
150
A
Grenzlastintegral
I²t - value
Vç = 0 V, t« = 10 ms, TÝÎ = 125°C
Vç = 0 V, t« = 10 ms, TÝÎ = 150°C
I²t
1050
985
A²s
A²s
Charakteristische Werte / characteristic values
min.
typ.
max.
Durchlassspannung
forward voltage
IŒ = 75 A, V•Š = 0 V
IŒ = 75 A, V•Š = 0 V
IŒ = 75 A, V•Š = 0 V
1,70
1,65
1,65
2,15
V
V
V
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
Rückstromspitze
peak reverse recovery current
IŒ = 75 A, - diŒ/dt = 2800 A/ s (TÝÎ=150°C)
Vç = 600 V
V•Š = -15 V
Iç¢
115
120
125
A
A
A
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
Sperrverzögerungsladung
recovered charge
IŒ = 75 A, - diŒ/dt = 2800 A/ s (TÝÎ=150°C)
Vç = 600 V
V•Š = -15 V
8,60
14,0
16,0
C
C
C
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
Abschaltenergie pro Puls
reverse recovery energy
IŒ = 75 A, - diŒ/dt = 2800 A/ s (TÝÎ=150°C)
Vç = 600 V
V•Š = -15 V
EØþÊ
2,60
4,50
5,50
mJ
mJ
mJ
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
Innerer Wärmewiderstand
thermal resistance, junction to case
pro Diode / per diode
RÚÌœ†
0,55
0,65
K/W
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro Diode / per diode
ð«ÈÙÚþ = 1 W/(m·K) /
ðÃØþÈÙþ = 1 W/(m·K)
RÚ̆™
0,75
K/W
NTC-Widerstand / NTC-thermistor
Charakteristische Werte / characteristic values
min.
typ.
max.
Nennwiderstand
rated resistance
T† = 25°C
Rèë
5,00
Abweichung von Ræåå
deviation of Ræåå
T† = 100°C, Ræåå = 493 Â
ÆR/R
-5
5
%
Verlustleistung
power dissipation
T† = 25°C
Pèë
20,0
mW
B-Wert
B-value
Rè = Rèë exp [Bèëõëå(1/Tè - 1/(298,15 K))]
Bèëõëå
3375
K
B-Wert
B-value
Rè = Rèë exp [Bèëõîå(1/Tè - 1/(298,15 K))]
Bèëõîå
3411
K
B-Wert
B-value
Rè = Rèë exp [Bèëõæåå(1/Tè - 1/(298,15 K))]
Bèëõæåå
3433
K
Angaben gemäß gültiger Application Note.
Specification according to the valid application note.


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