PTFA082201E_09 datasheet(6/10 Pages) INFINEON

Part #	PTFA082201E

Description	Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 ??894 MHz

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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6 / 10 page

Data Sheet

6 of 10

Rev. 04.1, 2009-02-20

PTFA082201E

PTFA082201F

Confidential, Limited Internal Distribution

RF_OUT

RF_IN

R3

2K V

C3

0.001µF

C2

0.001µF

Q1

BCP56

R2

1.3K V

QQ1

LM7805

C1

0.001µF

VDD

R5

10 V

R4

2K V

R1

1.2K V

C8

33pF

l

6

l

7

l

8

R8

10 V

DUT

C5

0.1µF

C4

10µF

35V

C7

33pF

R7

5.1KV

R6

5.1K V

l

1

C9

3.9pF

L1

C11

33pF

C13

10µF

50V

C12

1µF

C16

10µF

50V

C24

3.3pF

C25

33pF

l

2

l

3

l

4

l

5

C10

8.2pF

C14

100µF

50V

C15

0.1µF

l

9

l

10

l

11

l

12

l

13

C23

3.3pF

C17

33pF

C19

10µF

50V

C18

1µF

C22

10µF

50V

C20

100µF

50V

C21

0.1µF

L2

VDD

C6

1µF

a082201ef_bd_12-14-07

Reference Circuit

Reference circuit schematic for ƒ = 894 MHz

Circuit Assembly Information

DUT

PTFA082201E or PTFA082201F

LDMOS Transistor

PCB

0.76 mm [.030"] thick,

εr = 3.48

Rogers RO4350

1 oz. copper

Microstrip

Electrical Characteristics at 894 MHz1

Dimensions: L x W ( mm) Dimensions: L x W (in.)

l1

0.065

λ, 50.0 Ω

13.13 x 1.60

0.517 x 0.063

l2

0.049

λ, 38.0 Ω

9.78 x 2.54

0.385 x 0.100

l3

0.024

λ, 38.0 Ω

4.83 x 2.54

0.190 x 0.100

l4

0.083

λ, 7.8 Ω

15.44 x 17.83

0.608 x 0.702

l5

0.027

λ, 7.8 Ω

4.95 x 17.83

0.195 x 0.702

l6

0.190

λ, 78.0 Ω

40.64 x 0.74

1.600 x 0.029

l7, l8

0.183

λ, 60.0 Ω

37.54 x 1.24

1.478 x 0.049

l9

0.095

λ, 8.4 Ω

17.68 x 16.48

0.696 x 0.649

l10 (taper)

0.031

λ, 8.4 Ω / 11.2 Ω

5.94 x 16.48 / 11.91

0.234 x 0.649 / 0.469

l11 (taper)

0.077

λ, 11.2 Ω / 37.0 Ω

14.53 x 11.91 / 2.64

0.572 x 0.469 / 0.104

l12

0.025

λ, 37.0 Ω

4.98 x 2.64

0.196 x 0.104

l13

0.028

λ, 50.0 Ω

5.74 x 1.60

0.226 x 0.063

1Electrical characteristics are rounded.

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PTFA082201E Datasheet(PDF) 6 Page - Infineon Technologies AG

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