SPI20N60CFD datasheet(3/12 Pages) INFINEON

Part #	SPI20N60CFD

Description	Cool MOS??Power Transistor Feature New revolutionary high voltage technology

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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3 / 12 page

200

7-02-01

Rev. 2.

Page 3

SP

I20N60CFD

Electrical Characteristics , at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Values

Unit

min.

typ.

max.

Transconductance

g

fs

VDS≥2*ID*RDS(on)max,

I

D=13.1A

-

17.5

-

S

Input capacitance

Ciss

VGS=0V, VDS=25V,

f=1MHz

-

2400

-

pF

Output capacitance

C

oss

-

780

-

Reverse transfer capacitance

Crss

-

50

-

Effective output capacitance,2)

energy related

Co(er)

VGS=0V,

VDS=0V to 480V

-

83

-

pF

Effective output capacitance,3)

time related

Co(tr)

-

160

-

Turn-on delay time

td(on)

VDD=380V, VGS=0/10V,

ID=20.7A, RG=3.6Ω

-

12

-

ns

Rise time

tr

-

15

-

Turn-off delay time

td(off)

-

59

-

Fall time

tf

-

6.4

-

Gate Charge Characteristics

Gate to source charge

Qgs

VDD=480V, ID=20.7A

-

15

-

nC

Gate to drain charge

Q

gd

-

54

-

Gate charge total

Qg

VDD=480V, ID=20.7A,

VGS=0 to 10V

-

95

124

Gate plateau voltage

V

(plateau)

VDD=480V, ID=20.7A

-

7

-

V

1Repetitve avalanche causes additional power losses that can be calculated as P

AV=EAR*f.

2C

o(er) is a fixed capacitance that gives the same stored energy as Coss while V DS is rising from 0 to 80% VDSS.

3C

o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% VDSS.

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