PTFA210701F datasheet(3/10 Pages) INFINEON

Part #	PTFA210701F

Description	Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 ??2170 MHz

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Manufacturer	INFINEON [Infineon Technologies AG]

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Data Sheet

3 of 10

Rev. 02.1, 2009-02-18

PTFA210701E

PTFA210701F

Confidential, Limited Internal Distribution

Broadband Performance

VDD = 30 V, IDQ = 550 mA, POUT = 42.5 dBm

10

15

20

25

30

35

2070 2090 2110 2130 2150 2170 2190 2210

Frequency (MHz)

-35

-30

-25

-20

-15

-10

-5

0

5

10

Gain

Efficiency

Return Loss

Two-tone Drive-up at Optimum IDQ

VDD = 30 V, IDQ = 550 mA,

ƒ = 2140 MHz, tone spacing = 1 MHz

-65

-60

-55

-50

-45

-40

-35

-30

-25

35

37

39

41

43

45

47

49

Output Power, PEP (dBm)

5

10

15

20

25

30

35

40

45

IM5

Efficiency

IM7

IM3

Typical Performance (data taken in a production test fixture)

Power Sweep, CW Conditions

VDD = 30 V, IDQ = 550 mA, ƒ = 2170 MHz

13

14

15

16

17

18

0

20

40

60

80

100

Output Power (W)

10

20

30

40

50

60

Gain

Efficiency

TCASE = 25°C

TCASE = 90°C

Two-carrier WCDMA at Selected Biases

VDD = 30 V, ƒ = 2140 MHz, 3GPP WCDMA signal,

P/AR = 8 dB, 10 MHz carrier spacing, series show IDQ

-60

-55

-50

-45

-40

-35

-30

30

32

34

36

38

40

42

44

Average Output Power (dBm)

500 mA

550 mA

450 mA

650 mA

600 mA

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PTFA210701F Datasheet(PDF) 3 Page - Infineon Technologies AG

PTFA210701F Datasheet(HTML) 3 Page - Infineon Technologies AG

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