PTMA210452EL

PTMA210452FL

Confidential, Limited Internal Distribution

Data Sheet

1 of 11

Rev. 06, 2009-09-01

ESD: Electrostatic discharge sensitive device—observe handling precautions!

PTMA210452EL

Package H-33265-8

PTMA210452FL

Package H-34265-8

Broadband Performance

fixture tuned for 2110 – 2140 MHz

0

5

10

15

20

25

30

35

1700 1800 1900 2000 2100 2200 2300 2400 2500

Frequency (MHz)

-35

-30

-25

-20

-15

-10

-5

0

Gain

Return Loss

Description

The PTMA210452EL and PTMA210452FL are wideband, 45-watt,

2-stage, LDMOS integrated amplifiers intended for use in all typical

modulation formats from 1900 to 2200 MHz. These devices are offered

in thermally-enhanced ceramic packages with solder-friendly plating

for cool and reliable operation.

Wideband RF LDMOS Integrated Power Amplifier

45 W, 1900 – 2200 MHz

Features

• Designed for wide RF and modulation bandwidths

and low memory effects

• Typical two-carrier WCDMA performance at

2140 MHz, 28 V

- Average output power = 3.2 W

- Linear Gain = 28 dB

- Efficiency = 10.5%

- IMD3 = –47 dBc

• Typical two-tone performance, 2140 MHz, 28 V

- Output power (PEP) = 45 W at IM3 = –30 dBc

- Efficiency = 32%

• Capable of handling 10:1 VSWR @ 28 V, 45 W

(CW) output power

• Integrated ESD protection. Meets HBM Class 1B

(minimum), per JESD22-A114F

• Thermally-enhanced packages, Pb-free and

RoHS compliant, with solder-friendly plating

*See Infineon distributor for future availability.

RF Characteristics

ƒ1 = 2135 MHz, ƒ2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF

Characteristic

Symbol

Min

Typ

Max

Unit

Input Return Loss

IRL

—

–16

–10

dB

Gain

26.5

28

—

dB

Drain Efficiency

9

10.5

—

%

Intermodulation Distortion, 2-channel WCDMA

IMD

–43

–47

—

dBc