IPT0406-25F datasheet(2/4 Pages) IPS

Part #	IPT0406-25F

Description	High current density due to double mesa technology

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Manufacturer	IPS [IP SEMICONDUCTOR CO., LTD.]

Direct Link	http://www.ipsemiconductor.com

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ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified)

Symbol

Test Condition

Quadrant

Rating

Unit

MIN

TYP

MAX

IGT

VD = 12V RL = 30

Ω

T2+G+/T2+G-/T2-G-

18 - 25

50

mA

VGT

T2+G+/T2+G-/T2-G-

1.5

V

VGD

VD=VDRM, RL=3.3K

Ω,

Tj = 125 ℃

0.2

V

IL

IG = 1.2 IGT

T2+ G+

60

mA

T2+ G-

70

T2- G-

60

IH

IT = 100mA

T2+G+/T2+G-/T2-G-

50

mA

dV/dt

VD = 67% VDRM gate open Tj = 125 ℃

500

V/us

2

STATIC CHARACTERISTICS

Symbol

Test Conditions

Value (MAX)

Unit

IDRM

VD = VDRM

Tj = 25 ℃

10

uA

IRRM

VR = VRRM

Tj = 125 ℃

1

mA

THERMAL RESISTANCES

Symbol

Parameter

Value

Unit

Rth (j

– c)

Junction to case (AC)

3.5

℃/W

IPT0406-xxF

4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea

TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com

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IPT0406-25F Datasheet(PDF) 2 Page - IP SEMICONDUCTOR CO., LTD.

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