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PTFA041501GL Datasheet(PDF) 3 Page - Infineon Technologies AG

Part # PTFA041501GL
Description  Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 ??500 MHz
Download  11 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

PTFA041501GL Datasheet(HTML) 3 Page - Infineon Technologies AG

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Data Sheet
3 of 11
Rev. 02, 2008-11-21
PTFA041501GL
PTFA041501HL
Confidential, Limited Internal Distribution
Power Sweep at selected IDQ
VDD = 28 V, ƒ = 470 MHz
17.0
17.5
18.0
18.5
19.0
19.5
20.0
20.5
21.0
21.5
22.0
39
41
43
45
47
49
51
53
55
Output Power (dBm)
IDQ = 1125 mA
IDQ = 900 mA
IDQ = 675 mA
Broadband Circuit Performance
VDD = 28 V, IDQ = 900 mA, P1dB
15
20
25
30
35
40
45
50
460
462
464
466
468
470
Frequency (MHz)
-20
-19
-18
-17
-16
-15
-14
-13
Gain
Efficiency
Return Loss
Typical Performance (data taken in a production )
Power Sweep, CW Conditions
VDD = 28 V, IDQ = 900 mA, ƒ = 470 MHz
15
16
17
18
19
20
21
22
39
41
43
45
47
49
51
53
55
Output Power (dBm)
10
20
30
40
50
60
70
80
Gain
Efficiency
TCASE = 25°C
TCASE = 90°C
POUT, Gain & Efficiency (at P-1dB) vs. Frequency
VDD = 28 V, IDQ = 900 mA, P–1dB
15
20
25
30
35
40
45
50
55
60
65
460
462
464
466
468
470
Frequency (MHz)
19.9
20
20.1
20.2
20.3
20.4
20.5
20.6
20.7
20.8
20.9
Gain
Efficiency
P–1dB


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