IPB107N20N3G datasheet(7/11 Pages) INFINEON

Part #	IPB107N20N3G

Description	OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

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Manufacturer	INFINEON [Infineon Technologies AG]

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IPB107N20N3 G IPP110N20N3 G

IPI110N20N3 G

13 Avalanche characteristics

14 Typ. gate charge

I AS=f(t AV); R GS=25 Ω

V GS=f(Q gate); I D=44 A pulsed

parameter: T j(start)

parameter: V DD

15 Drain-source breakdown voltage

16 Gate charge waveforms

V BR(DSS)=f(T j); I D=1 mA

40 V

100 V

160 V

0

2

4

6

8

10

020

40

60

80

Q gate [nC]

180

190

200

210

220

230

-60

-20

20

60

100

140

180

T j [°C]

V GS

Q gate

V gs(th)

Q g(th)

Q gs

Q gd

Q sw

Q g

25 °C

100 °C

125 °C

1

10

100

1

10

100

1000

t AV [µs]

Rev. 2.2

page 7

2009-10-21

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IPB107N20N3G Datasheet(PDF) 7 Page - Infineon Technologies AG

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