IPB083N10N3G datasheet(1/12 Pages) INFINEON

Part #	IPB083N10N3G

Description	OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

Download	12 Pages

Scroll/Zoom	100%

Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

Logo

1 / 12 page

IPP086N10N3 G

IPI086N10N3 G

IPB083N10N3 G IPD082N10N3 G

OptiMOS™3 Power-Transistor

Features

• N-channel, normal level

• Excellent gate charge x R DS(on) product (FOM)

• Very low on-resistance R DS(on)

• 175 °C operating temperature

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC

1) for target application

• Ideal for high-frequency switching and synchronous rectification

• Halogen-free according to IEC61249-2-21 *

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

Continuous drain current

I D

T C=25 °C

2)

80

A

T C=100 °C

58

Pulsed drain current

2)

I D,pulse

T C=25 °C

320

Avalanche energy, single pulse

E AS

I D=73 A, R GS=25 Ω

110

mJ

Gate source voltage

V GS

±20

V

Power dissipation

P tot

T C=25 °C

125

W

Operating and storage temperature

T j, T stg

-55 ... 175

°C

IEC climatic category; DIN IEC 68-1

55/175/56

* Excep D-PAK ( TO-252-3 )

Value

1)J-STD20 and JESD22

2) See figure 3

V DS

100

V

R DS(on),max (TO 252)

8.2

m

Ω

I D

80

A

Product Summary

Type

IPP086N10N3 G

IPI086N10N3 G

IPB083N10N3 G

IPD082N10N3 G

Package

PG-TO220-3

PG-TO262-3

PG-TO263-3

PG-TO252-3

Marking

086N10N

083N10N

082N10N

Rev. 2.5

page 1

2010-07-16

Similar Part No. - IPB083N10N3G

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	IPB083N10N3G	784Kb / 12P	N-channel, normal level Rev. 2.6 2013-07-09

More results

Similar Description - IPB083N10N3G

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	IPB08CN10NG	413Kb / 11P	OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) Rev. 1.08 2010-04-26
	IPB200N15N3	556Kb / 12P	OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) Rev. 2.05 2010-04-28
	IPB072N15N3G	424Kb / 11P	OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) Rev. 2.06 2010-04-19
	IPB107N20N3G	452Kb / 11P	OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) Rev. 2.2 2009-10-21
	IPP023NE7N3G	466Kb / 10P	OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) Rev. 2.11 2009-11-11
	IPB108N15N3G	438Kb / 11P	OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) Rev. 2.1 2009-12-01
	IPP028N08N3G	463Kb / 10P	OptiMOS짰3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) Rev. 1.0 2008-01-25
	IPB600N25N3G	426Kb / 11P	OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) Rev. 2.2 2009-10-23
Shanghai Leiditech Elec...	LMP0218G	1Mb / 6P	Excellent gate charge x RDS(on) product(FOM)
Infineon Technologies A...	IPP16CN10N	624Kb / 12P	OptiMOS짰2 Power-Transistor Excellent gate charge x RDS(on) product (FOM) Rev. 1.01 2006-06-02

More results

IPB083N10N3G Datasheet(PDF) 1 Page - Infineon Technologies AG

IPB083N10N3G Datasheet(HTML) 1 Page - Infineon Technologies AG

Similar Part No. - IPB083N10N3G

Similar Description - IPB083N10N3G

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Datasheet Download

Link URL