IPB083N10N3G datasheet(3/12 Pages) INFINEON

Part #	IPB083N10N3G

Description	OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

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Manufacturer	INFINEON [Infineon Technologies AG]

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IPP086N10N3 G

IPI086N10N3 G

IPB083N10N3 G IPD082N10N3 G

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

C iss

-

2990

3980

pF

Output capacitance

C oss

-

523

696

Reverse transfer capacitance

C rss

-21-

Turn-on delay time

t d(on)

-18-

ns

Rise time

t r

-42-

Turn-off delay time

t d(off)

-31-

Fall time

t f

-8

-

Gate Charge Characteristics

4)

Gate to source charge

Q gs

-15-

nC

Gate to drain charge

Q gd

-8

-

Switching charge

Q sw

-14-

Gate charge total

Q g

-42

55

Gate plateau voltage

V plateau

-

4.9

-

V

Output charge

Q oss

V DD=50 V, V GS=0 V

-55

73

nC

Reverse Diode

Diode continous forward current

I S

-

80

A

Diode pulse current

I S,pulse

-

320

Diode forward voltage

V SD

V GS=0 V, I F=80 A,

T j=25 °C

-

1.0

1.2

V

Reverse recovery time

t rr

-71-

ns

Reverse recovery charge

Q rr

-

123

-

nC

4) See figure 16 for gate charge parameter definition

V R=50 V, I F=73 A,

di F/dt =100 A/µs

T C=25 °C

Values

V GS=0 V, V DS=50 V,

f =1 MHz

V DD=50 V, V GS=10 V,

I D=73 A, R G=1.6 Ω

V DD=50 V, I D=73 A,

V GS=0 to 10 V

Rev. 2.5

page 3

2010-07-16

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