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IPF135N03LG Datasheet(PDF) 2 Page - Infineon Technologies AG

Part # IPF135N03LG
Description  OptiMOS 3 Power-Transistor Features Optimized technology for DC/DC converters
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IPF135N03LG Datasheet(HTML) 2 Page - Infineon Technologies AG

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IPD135N03L G
IPF135N03L G
IPS135N03L G
IPU135N03L G
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Power dissipation
P tot
T C=25 °C
31
W
Operating and storage temperature
T j, T stg
-55 ... 175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance, junction - case
R thJC
-
-
4.9
K/W
SMD version, device on PCB
R thJA
minimal footprint
-
-
75
6 cm² cooling area
4)
--
50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
30
-
-
V
Gate threshold voltage
V GS(th)
V DS=V GS, I D=250 µA
1
-
2.2
Zero gate voltage drain current
I DSS
V DS=30 V, V GS=0 V,
T j=25 °C
-
0.1
1
µA
V DS=30 V, V GS=0 V,
T j=125 °C
-
10
100
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10
100
nA
R DS(on)
V GS=4.5 V, I D=20 A
-
16.4
20.5
m
V GS=10 V, I D=30 A
-
11.3
13.5
Gate resistance
R G
-
1.2
-
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=30 A
22
43
-
S
3) See figure 13 for more detailed information
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
5) Measured from drain tab to source pin
Value
Values
2) See figure 3 for more detailed information
Drain-source on-state resistance
5)
Rev. 1.0
page 2
2006-10-23


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