IPSH6N03LAG datasheet(7/12 Pages) INFINEON

Part #	IPSH6N03LAG

Description	OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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13 Avalanche characteristics

14 Typ. gate charge

I AS=f(t AV); R GS=25 Ω

V GS=f(Q gate); I D=25 A pulsed

parameter: Tj(start)

parameter: V DD

15 Drain-source breakdown voltage

16 Gate charge waveforms

V BR(DSS)=f(T j); I D=1 mA

5 V

15 V

20 V

0

2

4

6

8

10

12

0

5

10

15

20

25

30

Q gate [nC]

20

21

23

24

26

27

28

30

-60

-20

20

60

100

140

180

T j [°C]

V GS

Q gate

V gs(th)

Q g(th)

Q gs

Q gd

Q sw

Q g

25 °C

100 °C

150 °C

1

10

100

1

10

100

1000

t AV [µs]

Rev. 1.5

page 7

2008-04-14

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IPSH6N03LAG Datasheet(PDF) 7 Page - Infineon Technologies AG

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