Electronic Components Datasheet Search |
|
IPP26CN10NG Datasheet(PDF) 6 Page - Infineon Technologies AG |
|
IPP26CN10NG Datasheet(HTML) 6 Page - Infineon Technologies AG |
6 / 12 page IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=35 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j typ 98 % 0 20 40 60 -60 -20 20 60 100 140 180 T j [°C] 39 µA 390 µA 0 0.5 1 1.5 2 2.5 3 3.5 4 -60 -20 20 60 100 140 180 T j [°C] 0 Ciss Coss Crss 10 4 10 3 10 2 10 1 10 0 0 2040 6080 V DS [V] 25 °C 175 °C 25 °C, 98% 175 °C, 98% 1 10 100 1000 0 0.5 1 1.5 2 V SD [V] Rev. 1.08 page 6 2010-04-28 |
Similar Part No. - IPP26CN10NG |
|
Similar Description - IPP26CN10NG |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |