IPP26CN10NG datasheet(6/12 Pages) INFINEON

Part #	IPP26CN10NG

Description	OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated

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Manufacturer	INFINEON [Infineon Technologies AG]

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IPB26CN10N G IPD25CN10N G

IPI26CN10N G IPP26CN10N G

9 Drain-source on-state resistance

10 Typ. gate threshold voltage

R DS(on)=f(T j); I D=35 A; V GS=10 V

V GS(th)=f(T j); V GS=V DS

parameter: I D

11 Typ. capacitances

12 Forward characteristics of reverse diode

C =f(V DS); V GS=0 V; f =1 MHz

I F=f(V SD)

parameter: T j

typ

98 %

0

20

40

60

-60

-20

20

60

100

140

180

T j [°C]

39 µA

390 µA

0

0.5

1

1.5

2

2.5

3

3.5

4

-60

-20

20

60

100

140

180

T j [°C]

0

Ciss

Coss

Crss

10

4

10

3

10

2

10

1

10

0

2040

6080

V DS [V]

25 °C

175 °C

25 °C, 98%

175 °C, 98%

1

10

100

1000

0

0.5

1

1.5

2

V SD [V]

Rev. 1.08

page 6

2010-04-28

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IPP26CN10NG Datasheet(PDF) 6 Page - Infineon Technologies AG

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