IPD25CN10NG datasheet(2/12 Pages) INFINEON

Part #	IPD25CN10NG

Description	OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated

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Manufacturer	INFINEON [Infineon Technologies AG]

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IPB26CN10N G IPD25CN10N G

IPI26CN10N G IPP26CN10N G

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

Thermal resistance, junction - case

R thJC

-

2.1

K/W

R thJA

minimal footprint

-

62

6 cm2 cooling area

4)

--

40

minimal footprint

-

75

6 cm2 cooling area

4)

--

50

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=1 mA

100

-

V

Gate threshold voltage

V GS(th)

V DS=V GS, I D=39 µA

234

Zero gate voltage drain current

I DSS

V DS=80 V, V GS=0 V,

T j=25 °C

-

0.1

1

µA

V DS=80 V, V GS=0 V,

T j=125 °C

-

10

100

Gate-source leakage current

I GSS

V GS=20 V, V DS=0 V

-

1

100

nA

Drain-source on-state resistance

R DS(on)

V GS=10 V, I D=35 A,

(TO252)

-19

25

m

Ω

V GS=10 V, I D=35 A,

(TO251)

-19

25

V GS=10 V, I D=35 A,

(TO263)

-20

26

V GS=10 V, I D=35 A,

(TO220, TO262)

-20

26

Gate resistance

R G

-

1.1

-

Ω

Transconductance

g fs

|V DS|>2|I D|R DS(on)max,

I D=35 A

19

38

-

S

Values

4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

Thermal resistance, junction -

ambient (TO220, TO262, TO263)

Thermal resistance, junction -

ambient (TO252, TO251)

Rev. 1.08

page 2

2010-04-28

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IPD25CN10NG Datasheet(PDF) 2 Page - Infineon Technologies AG

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