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IPB26CN10NG Datasheet(PDF) 7 Page - Infineon Technologies AG

Part # IPB26CN10NG
Description  OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IPB26CN10NG Datasheet(HTML) 7 Page - Infineon Technologies AG

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IPB26CN10N G IPD25CN10N G
IPI26CN10N G IPP26CN10N G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=35 A pulsed
parameter: T j(start)
parameter: V DD
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
20 V
50 V
80 V
0
2
4
6
8
10
12
0
5
10
15
20
25
Q gate [nC]
90
95
100
105
110
115
-60
-20
20
60
100
140
180
T j [°C]
V GS
Q gate
V gs(th)
Q g(th)
Q gs
Q gd
Q sw
Q g
25 °C
100 °C
150 °C
1
10
100
1
10
100
1000
t AV [µs]
Rev. 1.08
page 7
2010-04-28


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