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IRGP4069D-EPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRGP4069D-EPBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 11 page  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGP4069DPbF IRGP4069D-EPbF PD - 97425 1 www.irf.com 10/2/09 E G n-channel C VCES = 600V IC(Nominal) = 35A tSC ≥ 5µs, TJ(max) = 175°C VCE(on) typ. = 1.6V GC E Gate Collector Emitter TO-247AC IRGP4069DPbF TO-247AD IRGP4069D-EPbF G C E C G C E C Features • Low VCE (ON) Trench IGBT Technology • Low Switching Losses • Maximum Junction Temperature 175 °C • 5 µS short circuit SOA • Square RBSOA • 100% of The Parts Tested for ILM • Positive VCE (ON) Temperature Coefficient • Tight Parameter Distribution • Lead Free Package Benefits • High Efficiency in a Wide Range of Applications • Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses • Rugged Transient Performance for Increased Reliability • Excellent Current Sharing in Parallel Operation Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 76 IC @ TC = 100°C Continuous Collector Current 50 INOMINAL Nominal Current 35 ICM Pulse Collector Current, VGE = 15V 105 A ILM Clamped Inductive Load Current, VGE = 20V c 140 IF @ TC = 25°C Diode Continous Forward Current 76 IF @ TC = 100°C Diode Continous Forward Current 50 IFM Diode Maximum Forward Current d 140 VGE Continuous Gate-to-Emitter Voltage ±20 V Transient Gate-to-Emitter Voltage ±30 PD @ TC = 25°C Maximum Power Dissipation 268 W PD @ TC = 100°C Maximum Power Dissipation 134 TJ Operating Junction and -55 to +175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m) Thermal Resistance Parameter Min. Typ. Max. Units RθJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) f ––– ––– 0.56 °C/W RθJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) f ––– ––– 1.0 RθCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 ––– RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 40 ––– |
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