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IRG7PH35UD1PBF Datasheet(PDF) 3 Page - International Rectifier

Part # IRG7PH35UD1PBF
Description  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRG7PH35UD1PBF Datasheet(HTML) 3 Page - International Rectifier

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IRG7PH35UD1PbF/IRG7PH35UD1-EP
www.irf.com
3
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case
Temperature
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 30µs
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 30µs
Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE = 20V
10
100
1000
10000
VCE (V)
1
10
100
1000
Fig. 3 - Typical Gate Threshold Voltage
(Normalized) vs. Junction Temperature
0
2
4
6
8
10
VCE (V)
0
10
20
30
40
50
60
70
80
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0
2
4
6
8
10
VCE (V)
0
10
20
30
40
50
60
70
80
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
25
50
75
100
125
150
TJ , Temperature (°C)
0.5
0.6
0.7
0.8
0.9
1.0
IC = 600µA
25
50
75
100
125
150
TC (°C)
0
10
20
30
40
50
25
50
75
100
125
150
TC (°C)
0
25
50
75
100
125
150
175
200


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