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IPT08Q08-BEB Datasheet(PDF) 1 Page - IP SEMICONDUCTOR CO., LTD.

Part # IPT08Q08-BEB
Description  High current density due to double mesa technology
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Manufacturer  IPS [IP SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.ipsemiconductor.com
Logo IPS - IP SEMICONDUCTOR CO., LTD.

IPT08Q08-BEB Datasheet(HTML) 1 Page - IP SEMICONDUCTOR CO., LTD.

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IP Semiconductor Co., Ltd.
IPT08Q08-xxB
High current density due to double mesa technology;
SIPOS and Glass Passivation. IPT08Q08-xx series are
suitable for general purpose AC Switching.
They can be used as an ON/OFF function In application
such as static relays, heating regulation, Induction
motor stating circuits… or for phase Control operation
light dimmers, motor speed Controllers.
MAIN FEATURES
ABSOLUTE MAXIMUM RATINGS
1
Symbol
Value
Unit
IT(RMS)
8
A
VDRM / VRRM
800
V
VTM
≤ 1.55
V
Parameter
Symbol
Value
Unit
Storage Junction Temperature Range
Operating Junction Temperature Range
Tstg
Tj
-40 to +150
-40 to +125
Repetitive Peak Off-state Voltage
Tj = 25℃
Repetitive Peak Reverse Voltage
VDRM
VRRM
800
800
V
Non Repetitive Peak Off-state Voltage
Tj = 25℃
Non Repetitive Peak Reverse Voltage
VDSM
VRSM
900
900
V
RMS on
–state current
Tc =95℃
(Full sine wave)
IT(RMS)
8
A
Non repetitive surge peak on
–state Current f = 60Hz t = 16.7ms
(full cycle, Tj = 25℃)
f = 50 Hz t = 20ms
ITSM
80
84
A
I²t Value for fusing
tp = 10ms
I²t
36
A²s
Critical Rate of rise of on-state current
IG = 2xIGT,
tr ≤ 100ns, f = 120Hz, Tj = 125 ℃
dI / dt
50
A/us
Peak gate current
tp = 20us, Tj = 125 ℃
IGM
4
A
Average gate power dissipation
Tj = 125 ℃
PG(AV)
1
W
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
TO-220B


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