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IPT04Q08-AED Datasheet(PDF) 2 Page - IP SEMICONDUCTOR CO., LTD. |
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IPT04Q08-AED Datasheet(HTML) 2 Page - IP SEMICONDUCTOR CO., LTD. |
2 / 5 page ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified) 2 STATIC CHARACTERISTICS Symbol Test Conditions Value (MAX) Unit VTM ITM = 5.5A, t p = 380uS Tj = 25 ℃ 1.6 V IDRM VD = VDRM Tj = 25 ℃ 5 uA IRRM VR = VRRM Tj = 125 ℃ 1 mA THERMAL RESISTANCES Symbol Parameter Value Unit Rth (j – c) Junction to case (AC) 2.6 ℃/W Symbol Test Condition Quadrant IPT04Q08-xxD Unit TE DE SE AE IGT VD = 12V RL = 30 Ω I – II – III IV MAX 5 5 5 10 10 10 10 25 mA VGT ALL MAX 1.5 V VGD VD=VDRM, RL=3.3K Ω, Tj = 125 ℃ ALL MIN 0.2 V IL IG = 1.2 IGT I – III – IV MAX 10 10 20 20 mA II 20 20 40 40 IH IT = 500mA MAX 15 15 25 25 mA dV/dt VD = 67% VDRM gate open Tj = 125 ℃ MIN 10 10 10 10 V/us (dV/dt)c (dV/dt) c=0.8A/ms Tj = 125 ℃ MIN 1 1 5 5 V/us 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com IPT04Q08-xxD |
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