IPS820-30F datasheet(2/4 Pages) IPS

Part #	IPS820-30F

Description	silicon controlled rectifiers

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Manufacturer	IPS [IP SEMICONDUCTOR CO., LTD.]

Direct Link	http://www.ipsemiconductor.com

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ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified)

Symbol

Test Condition

IPS820-xxB

Unit

30

IGT

Required DC gate current to trigger at 25℃

at - 40℃

at 125℃

MAX

30

55

15

mA

VGT

Required DC voltage to trigger

at 25℃

(anode supply = 6V, resistive load) at - 40℃

at 125℃

MAX

1.3

2.0

1.1

V

VGD

DC gate voltage not to trigger

(Tj = 125℃, VDRM = rated value)

MAX

0.2

V

IL

IG = 1.2 IGT

MAX

70

mA

IH

Holding current

MAX

50

mA

dV/dt

VD = 67% VDRM gate open Tj = 125 ℃

MIN

300

V/us

2

THERMAL RESISTANCES

Symbol

Parameter

Value

Unit

Rth (j

– c)

Junction to case

TO-220F

4.0

℃/W

Symbol

Test Conditions

Value

(MAX)

Unit

VTM

ITM = 30A, tp = 380uS

Tj = 25℃

1.6

V

IDRM / IRRM

VD = VDRM

Tj = 25℃

5

uA

VR = VRRM

Tj = 125℃

2

mA

STATIC CHARACTERISTICS

4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea

Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com

IPS820-xxF

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IPS820-30F Datasheet(PDF) 2 Page - IP SEMICONDUCTOR CO., LTD.

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