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IPS820-30B Datasheet(PDF) 1 Page - IP SEMICONDUCTOR CO., LTD. |
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IPS820-30B Datasheet(HTML) 1 Page - IP SEMICONDUCTOR CO., LTD. |
1 / 4 page IPS820-xxB IPS820 series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. High current density due to double mesa technology SIPOS and Glass passivation technology used has reliable operation up to 125℃ junction temperature. Low Igt parts available. IPS820 series are suitable for general purpose applications, a high gate sensitivity is required. Symbol Value Unit IT(RMS) 20 A IT(AV) 12 A VDRM / VRRM 800 V VTM ≤ 1.6 V MAIN FEATURES Parameter Symbol Value Unit RMS on –state current (Tc = 100℃, 180º conduction half sine wave) IT(RMS) 20 A Average on –state current (Tc = 100℃, 180º conduction half sine wave) IT(AV) 12 A Storage Junction Temperature Range Operating Junction Temperature Range Tstg Tj -40 to +150 -40 to +125 ℃ Repetitive Peak Off-state Voltage Tj = 25℃ Repetitive Peak Reverse Voltage Tj = 25℃ VDRM VRRM 800 800 V Non Repetitive Peak Off-state Voltage Tj = 25℃ Non Repetitive Peak Reverse Voltage Tj = 25℃ VDSM VRSM 900 900 V One cycle Non Repetitive surge current ( Half Cycle, 50Hz) ITSM 200 A I²t Value for fusing (tp = 10ms, Half Cycle) I²t 200 A²s Critical rate of rise of turned – on current (IG = 2 X IGT, Tj = 125℃) dI/dt 50 A/us Peak gate current tp = 20us, Tj = 125℃ IGM 5 A Average gate power dissipation Tj = 125℃ PG(AV) 1 W ABSOLUTE MAXIMUM RATINGS 1 TO-220B IP Semiconductor Co., Ltd. 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com |
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