IPS820-xxB

IPS820 series of silicon controlled rectifiers are

specifically designed for medium power switching and

phase control applications.

High current density due to double mesa technology

SIPOS and Glass passivation technology used has

reliable operation up to 125℃ junction temperature.

Low Igt parts available.

IPS820 series are suitable for general purpose

applications, a high gate sensitivity is required.

Symbol

Value

Unit

20

A

12

A

800

V

≤ 1.6

V

MAIN FEATURES

Parameter

Symbol

Value

Unit

RMS on

–state current (Tc = 100℃, 180º conduction half sine wave)

20

A

Average on

–state current

(Tc = 100℃, 180º conduction half sine wave)

12

A

Storage Junction Temperature Range

Operating Junction Temperature Range

Tstg

Tj

-40 to +150

-40 to +125

℃

Repetitive Peak Off-state Voltage

Tj = 25℃

Repetitive Peak Reverse Voltage

Tj = 25℃

800

800

V

Non Repetitive Peak Off-state Voltage

Tj = 25℃

Non Repetitive Peak Reverse Voltage

Tj = 25℃

900

900

V

One cycle Non Repetitive surge current ( Half Cycle, 50Hz)

200

A

I²t Value for fusing

I²t

200

A²s

Critical rate of rise of turned

dI/dt

50

A/us

Peak gate current

5

A

Average gate power dissipation

Tj = 125℃

1

W

ABSOLUTE MAXIMUM RATINGS

1

TO-220B

IP Semiconductor Co., Ltd.

4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea

Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com