IP Semiconductor Co., Ltd.

IPS808-xxD

High sensitive triggering levels, the IPS808 series

SCRs is suitable for all applications, where the

available gate current is limited, such as capacitive

discharge ignitions, motor control in kitchen aids,

overvoltage crowbar protection in low power

supplies…

Symbol

Value

Unit

8

A

800

V

≤ 100

uA

MAIN FEATURES

Parameter

Symbol

Value

Unit

Storage Junction Temperature Range

Operating Junction Temperature Range

Tstg

Tj

-40 to +150

-40 to +110

℃

Repetitive Peak Off-state Voltage

Tj = 25℃

Repetitive Peak Reverse Voltage

Tj = 25℃

800

800

V

RMS on

–state current (180 conduction angle)

Tj = 105℃

8

A

Average on-state current (180 conduction angle)

Tj = 105℃

5

A

Non repetitive surge peak on

–state Current (Tj = 25℃)

tp = 10ms

tp = 8.3ms

70

73

A

I²t Value for fusing

I²t

24.5

A²s

tr≤100ns,

f = 50Hz, Tj = 110℃

dI/dt

50

A/us

Peak gate current

4

A

Average gate power dissipation

Tj = 125℃

1

W

ABSOLUTE MAXIMUM RATINGS

1

2. Anode

1. Cathode

3. Gate

DPAK(TO-252)

4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea

Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com