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BAL99 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BAL99 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 6 page 2007-04-19 1 BAL99... Silicon Switching Diode • For high-speed switching applications • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BAL99 ! Type Package Configuration Marking BAL99 SOT23 single JFs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage VR 80 V Peak reverse voltage- VRM 85 Forward current IF 250 mA Peak forward current IFM - Surge forward current, t = 1 µs IFS 4.5 A Total power dissipation TS ≤ 54°C Ptot 370 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS ≤ 260 K/W 1Pb-containing package may be available upon special request 2For calculation of R thJA please refer to Application Note Thermal Resistance |
Similar Part No. - BAL99_07 |
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Similar Description - BAL99_07 |
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