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IKW25T120 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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IKW25T120 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 16 page IKW25T120 TrenchStop® Series Power Semiconductors 1 Rev. 2.2 Sep 08 Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP314D • Short circuit withstand time – 10 µs • Designed for : - Frequency Converters - Uninterrupted Power Supply • TrenchStop ® and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior • NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) • Low EMI • Low Gate Charge • Very soft, fast recovery anti-parallel EmCon HE diode • Qualified according to JEDEC 1 for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Code Package IKW25T120 1200V 25A 1.7V 150 °C K25T120 PG-TO-247-3 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V DC collector current TC = 25 °C TC = 100 °C IC 50 25 Pulsed collector current, tp limited by Tjmax ICpuls 75 Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C - 75 Diode forward current TC = 25 °C TC = 100 °C IF 50 25 Diode pulsed current, tp limited by Tjmax IFpuls 75 A Gate-emitter voltage VGE ±20 V Short circuit withstand time 2) VGE = 15V, VCC ≤ 1200V, Tj ≤ 150°C tSC 10 µs Power dissipation TC = 25 °C Ptot 190 W Operating junction temperature Tj -40...+150 Storage temperature Tstg -55...+150 °C 1 J-STD-020 and JESD-022 2) Allowed number of short circuits: <1000; time between short circuits: >1s. G C E PG-TO-247-3 |
Similar Part No. - IKW25T120_08 |
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Similar Description - IKW25T120_08 |
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