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BC807-16W Datasheet(PDF) 3 Page - Infineon Technologies AG |
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BC807-16W Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 11 page 2007-06-08 3 BC807.../BC808... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 , BC807... IC = 10 mA, IB = 0 , BC808... V(BR)CEO 45 25 - - - - V Collector-base breakdown voltage IC = 10 µA, IE = 0 , BC807... IC = 10 µA, IE = 0 , BC808... V(BR)CBO 50 30 - - - - Emitter-base breakdown voltage IE = 10 µA, IC = 0 V(BR)EBO 5 - - Collector-base cutoff current VCB = 25 V, IE = 0 VCB = 25 V, IE = 0 , TA = 150 °C ICBO - - - - 0.1 50 µA Emitter-base cutoff current VEB = 4 V, IC = 0 IEBO - - 100 nA DC current gain1) IC = 100 mA, VCE = 1 V, hFE-grp. 16 IC = 100 mA, VCE = 1 V, hFE-grp. 25 IC = 100 mA, VCE = 1 V, hFE grp. 40 IC = 500 mA, VCE = 1 V hFE 100 160 250 40 160 250 350 - 250 400 630 - - Collector-emitter saturation voltage1) IC = 500 mA, IB = 50 mA VCEsat - - 0.7 V Base emitter saturation voltage1) IC = 500 mA, IB = 50 mA VBEsat - - 1.2 1Pulse test: t < 300µs; D < 2% |
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