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BC817UPN Datasheet(PDF) 3 Page - Infineon Technologies AG

Part # BC817UPN
Description  NPN Silicon AF Transistor Array
Download  7 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BC817UPN Datasheet(HTML) 3 Page - Infineon Technologies AG

  BC817UPN_07 Datasheet HTML 1Page - Infineon Technologies AG BC817UPN_07 Datasheet HTML 2Page - Infineon Technologies AG BC817UPN_07 Datasheet HTML 3Page - Infineon Technologies AG BC817UPN_07 Datasheet HTML 4Page - Infineon Technologies AG BC817UPN_07 Datasheet HTML 5Page - Infineon Technologies AG BC817UPN_07 Datasheet HTML 6Page - Infineon Technologies AG BC817UPN_07 Datasheet HTML 7Page - Infineon Technologies AG  
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2007-04-20
3
BC817UPN
DC current gain hFE = ƒ(IC)
VCE = 1 V
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
A
IC
1
10
2
10
3
10
105 °C
85 °C
65 °C
25 °C
-40 °C
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 10
0
10
EHP00223
BC 817/818
CEsat
V
0.4
V
0.8
-1
100
101
3
10
5
5
Ι
C
mA
5
2
10
0.2
0.6
˚C
-50
25 ˚C
150 ˚C
Base-emitter saturation voltage
IC = ƒ(VBEsat), hFE = 10
0
10
EHP00222
BC 817/818
BEsat
V
2.0
V
4.0
-1
100
101
3
10
5
5
Ι
C
mA
5
2
10
1.0
3.0
˚C
-50
25 ˚C
˚C
150
Collector cutoff current ICBO = ƒ(TA)
VCBO = 25 V
0
10
EHP00221
BC 817/818
A
T
150
0
5
10
Ι
CBO
nA
50
100
1
10
2
10
4
10
˚C
typ
max
103


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