SPI12N50C3 datasheet(1/14 Pages) INFINEON

Part #	SPI12N50C3

Description	New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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200

7-08-30

Rev.

3.0

Page 1

SPP12N50C3

SPI12N50C3, SPA12N50C3

Cool MOS™ Power Transistor

VDS @ Tjmax

560

V

RDS(on)

0.38

Ω

ID

11.6

A

Feature

• New revolutionary high voltage technology

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dt rated

• Ultra low effective capacitances

• Improved transconductance

• PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)

PG-TO2

20-3-31 PG-TO262-

PG-TO220

2

P-TO220-3-1

2 3

1

P-TO220-3-31

1

2

3

Marking

12N50C3

Type

Package

Ordering Code

SPP12N50C3

PG-TO220

Q67040-S4579

SPI12N50C3

PG-TO262

Q67040-S4578

SPA12N50C3

PG-TO220

FP

SP000216322

Maximum Ratings

Parameter

Symbol

Value

Unit

SPP_I

SPA

Continuous drain current

TC = 25 °C

TC = 100 °C

ID

11.6

7

11.61)

71)

A

Pulsed drain current, tp limited by Tjmax

ID puls

34.8

A

Avalanche energy, single pulse

ID=5.5A, VDD=50V

EAS

340

mJ

Avalanche energy, repetitive tAR limited by Tjmax2)

ID=11.6A, VDD=50V

EAR

0.6

Avalanche current, repetitive tAR limited by Tjmax

IAR

11.6

A

Gate source voltage

VGS

±20

V

Gate source voltage AC (f >1Hz)

VGS

±30

Power dissipation, TC = 25°C

Ptot

125

33

W

Operating and storage temperature

Tj , Tstg

-55...+150

°C

Reverse diode dv/dt

Gate source voltage

dv/dt

15

V/ns

7)

FP

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