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IRIS-G6351S Datasheet(PDF) 1 Page - International Rectifier |
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IRIS-G6351S Datasheet(HTML) 1 Page - International Rectifier |
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1 / 7 page  www.irf.com IRIS-G6351S Features • Oscillator is provided on the monolithic control with adopting On-Chip- Trimming technology. • Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part. • Low start-up circuit current (50uA max) • Built-in Active Low-Pass Filter for stabilizing the operation in case of light load • Avalanche energy guaranteed MOSFET with high VDSS • The built-in power MOSFET simplifies the surge absorption circuit since the MOSFET guarantees the avalanche energy. • No VDSS de-rating is required. • Built-in constant voltage drive circuit • Various kinds of protection functions • Pulse-by-pulse Overcurrent Protection (OCP) • Overvoltage Protection with latch mode (OVP) • Thermal Shutdown with latch mode (TSD) INTEGRATED SWITCHER Package Outline TO-220 Fullpack (5 Lead) Descriptions IRIS-G6351S is a hybrid IC consists from power MOSFET and a controller IC, designed for PRC fly-back converter type SMPS (Switching Mode Power Supply) applications. This IC realizes downsizing and standardizing of a power supply system reducing external components count and simplifying the circuit designs. (Note). PRC is abbreviation of “Pulse Ratio Control” (On-width control with fixed OFF-time). Typical Connection Diagram Type MOSFET VDSS(V) RDS(ON) MAX AC input(V) Pout(W) Note 1 230±15% 65 85 to 264 30 IRIS-G6351S 650 3.95Ω Key Specifications Data Sheet No. PD 96945A Note 1: The Pout (W) represents the thermal rating at PRC Operation, and the peak power output is obtained by approximately 120 to 140% of the above listed. When the output voltage is low and ON-duty is narrow, the Pout (W) shall become lower than that of above. D DD D S SS S G GG GN NN ND DD D V VV Vi ii in nn n O OO OC CC CP PP P/ // /F FF FB BB B I II IR RR RI II IS SS S- -- -G GG G6 66 63 33 30 00 00 00 0 |
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