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IPP47N10S-33 Datasheet(PDF) 5 Page - Infineon Technologies AG |
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IPP47N10S-33 Datasheet(HTML) 5 Page - Infineon Technologies AG |
5 / 8 page 200 6-02-14 Page 5 IPI47N10S-33 IPP47N10S-33, IPB47N10S-33 5 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 80 µs 0 1 2 3 4 5 6 V 8 VDS 0 10 20 30 40 50 60 70 80 90 100 A 120 SPP47N10 VGS [V] a a 4.0 b b 4.5 c c 5.0 d d 5.5 e e 6.0 f f 6.5 g g 7.5 h h 8.0 i i 9.0 j j 9.0 k k 10.0 l Ptot = 175W l 20.0 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: VGS 0 20 40 60 80 A 110 ID 10 20 30 40 50 60 70 80 m 100 9V 10V 20V vgs[V] 8V 5V 5.5V 6V 6.5V 7V 7.5V 7 Typ. transfer characteristics ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 80 µs 0 1 2 3 4 5 6 7 8 V 10 VGS 0 5 10 15 20 25 30 35 40 45 50 A 60 8 Typ. forward transconductance gfs = f(ID); Tj=25°C parameter: gfs 0 10 20 30 40 A 60 ID 0 5 10 15 20 25 S 35 |
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