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IPI47N10S-33 Datasheet(PDF) 6 Page - Infineon Technologies AG

Part # IPI47N10S-33
Description  SIPMOS Power-Transistor Feature N-Channel Enhancement mode
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IPI47N10S-33 Datasheet(HTML) 6 Page - Infineon Technologies AG

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200
6-02-14
Page 6
IPI47N10S-33
IPP47N10S-33, IPB47N10S-33
9 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 33 A, VGS = 10 V
-60
-20
20
60
100
140 °C
200
Tj
0
10
20
30
40
50
60
70
80
90
100
110
m

130
SPP47N10
typ
98%
10 Gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS, ID = 2 mA
-60
-20
20
60
100
140
V
200
Tj
0
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
3.6
4
4.4
V
5
min
typ
max
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz
0
5
10
15
20
25
30
V
40
VDS
2
10
3
10
4
10
pF
Ciss
Coss
Crss
12 Forward character. of reverse diode
IF = f (VSD)
parameter: Tj , tp = 80 µs
0
0.4
0.8
1.2
1.6
2
2.4
V
3
VSD
0
10
1
10
2
10
3
10
A
SPP47N10
T
j = 25 °C typ
T
j = 25 °C (98%)
T
j = 175 °C typ
T
j = 175 °C (98%)


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