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STD20NF20 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STD20NF20
Description  N-channel 200 V, 0.10 廓, 18 A DPAK, TO-220, TO-220FP low gate charge STripFET??Power MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD20NF20 Datasheet(HTML) 3 Page - STMicroelectronics

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STD20NF20, STF20NF20, STP20NF20
Electrical ratings
Doc ID 13154 Rev 4
3/15
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220, DPAK
TO-220FP
VDS
Drain-source voltage (VGS = 0)
200
V
VGS
Gate- source voltage
± 20
V
ID
Drain current (continuous) at TC = 25 °C
18
A
ID
Drain current (continuous) at TC = 100 °C
11
A
IDM
(1)
1.
Pulse width limited by safe operating area
Drain current (pulsed)
72
A
PTOT
Total dissipation at TC = 25 °C
110
30
W
Derating factor
0.72
0.2
W/°C
dv/dt (2)
2.
ISD ≤ 18 A, di/dt ≤ 400 A/µs, VDD ≤ V(BR)DSS
Peak diode recovery voltage slope
15
V/ns
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; Tc = 25 °C)
2500
V
Tstg
Storage temperature
-55 to 175
°C
Tj
Max. operating junction temperature
Table 3.
Thermal data
Symbol
Parameter
TO-220
DPAK
TO-220FP
Unit
Rthj-case
Thermal resistance junction-case max
1.38
1.38
5
°C/W
Rthj-amb
Thermal resistance junction-ambient max
62.5
50 (1)
1.
When mounted on 1inch² FR-4, 2 Oz copper board.
62.5
°C/W
Tl
Maximum lead temperature for soldering
purpose
300
°C
Table 4.
Avalanche characteristics
Symbol
Parameter
Max value
Unit
IAR
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max)
18
A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
110
mJ


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