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STD2NK90Z Datasheet(PDF) 3 Page - STMicroelectronics

Part No. STD2NK90Z
Description  N-channel 900V - 5廓 - 2.1A - TO-220 /DPAK/IPAK Zener-Protected SuperMESH??MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD2NK90Z Datasheet(HTML) 3 Page - STMicroelectronics

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STP2NK90Z - STD2NK90Z - STD2NK90Z-1
Electrical ratings
3/18
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
STP2NK90Z
STD2NK90Z
STD2NK90Z-1
VDS
Drain-source voltage (VGS = 0)
900
V
VDGR
Drain-gate voltage (RGS = 20 kΩ)900
V
VGS
Gate- source Voltage
± 30
V
ID
Drain current (continuous) at TC = 25°C
2.1
A
ID
Drain current (continuous) at TC = 100°C
1.3
A
IDM
(1)
1.
Pulse width limited by safe operating area
Drain current (pulsed)
8.4
A
PTOT
Total dissipation at TC = 25°C
70
W
Derating factor
0.56
W/°C
VESD(G-S)
Gate source ESD(HBM-C=100pF,
R=1.5K
Ω)
2000
V
dv/dt (2)
2.
ISD ≤2.1A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX.
Peak diode recovery voltage slope
4.5
V/ns
Tj
Tstg
Operating junction temperature
Storage temperature
-55 to 150
-55 to 150
°C
°C
Table 2.
Thermal data
Symbol
Parameter
Value
Unit
Rthj-case Thermal resistance junction-case max
1.78
°C/W
Rthj-amb
Tl
Thermal resistance junction-ambient max
Maximum lead temperature for soldering purpose
62.5
300
°C/W
°C
Table 3.
Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
2.1
A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
150
mJ


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