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STD2NK90Z Datasheet(PDF) 6 Page - STMicroelectronics

Part No. STD2NK90Z
Description  N-channel 900V - 5廓 - 2.1A - TO-220 /DPAK/IPAK Zener-Protected SuperMESH??MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD2NK90Z Datasheet(HTML) 6 Page - STMicroelectronics

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Electrical characteristics
STP2NK90Z - STD2NK90Z - STD2NK90Z-1
6/18
Table 8.
Source drain diode
Symbol
Parameter
Test condictions
Min
Typ.
Max
Unit
ISD
Source-drain current
2.1
A
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current (pulsed)
8.4
A
VSD
(2)
2.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage
ISD = 2.1 A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 2 A, di/dt = 100 A/µs
VDD = 50V
(see Figure 20)
415
1.5
7.2
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 2 A, di/dt = 100 A/µs
VDD = 50V, Tj = 150°C
(see Figure 20)
515
1.9
7.5
ns
µC
A


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