STP16NK60Z datasheet(4/15 Pages) STMICROELECTRONICS

Part #	STP16NK60Z

Description	N-channel 600 V, 038 廓, 14 A, TO-220, TO-220FP, TO-247 Zener-protected SuperMESH??Power MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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4 / 15 page

Electrical characteristics

STF16NK60Z, STP16NK60Z, STW16NK60Z

4/15

Doc ID 10249 Rev 5

2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

620

V

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = Max rating

VDS = Max rating, TC=125 °C

1

50

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

± 10

µA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 50 µA

3

3.75

4.5

V

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 7 A

0.38

0.42

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f = 1 MHz, VGS = 0

-

2650

285

62

-

pF

COSS eq

(1)

1.

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VGS = 0, VDS = 0 to 480 V

-

158

-

pF

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 480 V, ID = 14 A,

VGS = 10 V

(see

Figure 19)

-

86

17

46

-

nC

Table 7.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off-delay time

Fall time

VDD = 480 V, ID = 14 A,

RG = 4.7 Ω, VGS = 10 V

(see

Figure 18)

-

30

25

70

15

-

ns

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