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PZT3904T1G Datasheet(PDF) 1 Page - ON Semiconductor |
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PZT3904T1G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 7 page Semiconductor Components Industries, LLC, 2010 October, 2010 -- Rev. 3 1 Publication Order Number: PZT3904T1/D PZT3904T1G General Purpose Transistor NPN Silicon Features These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector -- Emitter Voltage VCEO 40 Vdc Collector -- Base Voltage VCBO 60 Vdc Emitter -- Base Voltage VEBO 6.0 Vdc Collector Current -- Continuous IC 200 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation (Note 1) TA =25C PD 1.5 12 W mW/C Thermal Resistance Junction--to--Ambient (Note 1) RθJA 83.3 C/W Thermal Resistance Junction--to--Lead #4 RθJA 35 C/W Junction and Storage Temperature Range TJ,Tstg -- 55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-- 4 with 1 oz and 713 mm2 of copper area. http://onsemi.com COLLECTOR 2, 4 1 BASE 3 EMITTER †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Device Package Shipping† ORDERING INFORMATION PZT3904T1G SOT--223 (Pb--Free) 1000 / Tape & Reel SOT--223 CASE 318E STYLE 1 MARKING DIAGRAM 1 AYW 1AM G G 1AM = Specific Device Code A = Assembly Location Y = Year W = Work Week G = Pb--Free Package (Note: Microdot may be in either location) |
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