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STB85NF55LT4 Datasheet(PDF) 5 Page - STMicroelectronics |
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STB85NF55LT4 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 14 page STB85NF55L, STP85NF55L Electrical characteristics Doc ID 8544 Rev 8 5/14 Table 7. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current - 80 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) - 320 A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD = 80 A, VGS = 0 - 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80 A, di/dt = 100 A/µs, VDD = 20 V, TJ = 150 °C Figure 16 on page 8 - 80 240 6 ns nC A |
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