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2SK3449 Datasheet(PDF) 3 Page - Sanyo Semicon Device |
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2SK3449 Datasheet(HTML) 3 Page - Sanyo Semicon Device |
3 / 4 page 2SK3449 No.6672-3/4 0 0 1 2 3 4 5 6 7 8 4.5 4.0 3.0 1.0 2.0 2.5 3.5 0.5 1.5 9 10 VDS=10V ID=4.8A IT01220 0 0 20 40 0.2 60 0.4 0.6 80 100 120 0.8 1.0 1.2 140 160 IT02451 0 1.0 10 100 10 20 1000 7 5 3 2 7 5 3 2 7 5 3 2 60 30 40 50 f=1MHz Ciss Coss Crss IT01219 1.0 100 7 5 3 2 10 7 5 3 2 IT02549 0 0 20 40 2 60 4 6 80 100 120 8 10 12 140 160 IT02452 0.1 1.0 23 5 7 72 3 5 VDD=30V VGS=10V td(on) td(off) tr tf IT01216 0.01 0.1 0.1 1.0 23 5 7 23 5 7 23 5 7 10 1.0 7 5 3 2 7 5 3 2 10 VDS=10V 75 °C 25 °C Tc= --25 °C IT01217 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0.01 0.1 10 1.0 7 5 3 2 7 5 3 2 7 5 3 2 VGS = 0 100ms DC operation 10ms 1ms IDP=19.2A 2 3 2 3 5 7 2 3 5 7 10 1.0 0.1 23 5 7 2 3 2 3 57 0.1 1.0 10 57 100 IT02450 Operation in this area is limited by RDS(on). 100 µ s ID=4.8A <10 µs Drain Current, ID -- A SW Time -- ID Amibient Tamperature, Ta -- °C VGS -- Qg PD -- Ta Case Tamperature, Tc -- °C PD -- Tc Total Gate Charge, Qg -- nC Ciss, Coss, Crss -- VDS Drain-to-Source Voltage, VDS -- V | yfs| -- ID Drain Current, ID -- A IF -- VSD Diode Forward Voltage, VSD -- V A S O Drain-to-Source Voltage, VDS -- V Tc=25 °C Single pulse |
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