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PMEG3002EJ Datasheet(PDF) 9 Page - NXP Semiconductors |
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PMEG3002EJ Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 13 page PMEG3002EJ_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 15 May 2009 9 of 13 NXP Semiconductors PMEG3002EJ 200 mA low VF MEGA Schottky barrier rectifier The current ratings for the typical waveforms as shown in Figure 9, 10, 11 and 12 are calculated according to the equations: with IM defined as peak current, at DC, and with IRMS defined as RMS current. 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9. Package outline Fig 14. Duty cycle definition t1 t2 P t 006aaa812 duty cycle δ = t1 t2 I FAV () I M δ × = I RMS I FAV () = I RMS I M δ × = Fig 15. Package outline SOD323F (SC-90) 04-09-13 Dimensions in mm 0.80 0.65 0.25 0.10 0.5 0.3 2.7 2.3 1.8 1.6 0.40 0.25 1.35 1.15 1 2 |
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