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IXTA3N50D2 Datasheet(PDF) 1 Page - IXYS Corporation

Part # IXTA3N50D2
Description  Depletion Mode MOSFET
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXTA3N50D2 Datasheet(HTML) 1 Page - IXYS Corporation

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© 2009 IXYS CORPORATION, All Rights Reserved
Symbol
Test Conditions
Maximum Ratings
V
DSX
T
J
= 25
°C to 150°C
500
V
V
GSX
Continuous
±20
V
V
GSM
Transient
±30
V
P
D
T
C = 25°C
125
W
T
J
- 55 ... +150
°C
T
JM
150
°C
T
stg
- 55 ... +150
°C
T
L
1.6mm (0.062 in.) from Case for 10s
300
°C
T
SOLD
Plastic Body for 10s
260
°C
M
d
Mounting Torque (TO-220)
1.13 / 10
Nm/lb.in.
Weight
TO-263
2.5
g
TO-220
3.0
g
DS100148B(12/09)
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
BV
DSX
V
GS = - 5V, ID = 250μA
500
V
V
GS(off)
V
DS = 25V, ID = 250μA
- 2.0
- 4.0
V
I
GSX
V
GS = ±20V, VDS = 0V
±100 nA
I
DSX(off)
V
DS = VDSX, VGS= - 5V
5
μA
T
J = 125°C
50
μA
R
DS(on)
V
GS = 0V, ID = 1.5A, Note 1
1.5
Ω
I
D(on)
V
GS = 0V, VDS = 25V, Note 1
3
A
IXTA3N50D2
IXTP3N50D2
V
DSX
=
500V
I
D(on)
>
3A
R
DS(on)
≤≤≤≤
1.5
Ω
Ω
Ω
Ω
Ω
Features
• Normally ON Mode
• International Standard Packages
• Molding Epoxies Meet UL94V-0
Flammability Classification
Advantages
• Easy to Mount
• Space Savings
• High Power Density
Applications
• Audio Amplifiers
• Start-up Circuits
• Protection Circuits
• Ramp Generators
• Current Regulators
• Active Loads
Depletion Mode
MOSFET
N-Channel
G = Gate
D
= Drain
S = Source
Tab = Drain
TO-263 AA (IXTA)
G D
S
TO-220AB (IXTP)
D (Tab)
G
S
D (Tab)


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