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TIL111SVM Datasheet(PDF) 4 Page - Fairchild Semiconductor

Part No. TIL111SVM
Description  General Purpose 6-Pin Phototransistor Optocouplers
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

TIL111SVM Datasheet(HTML) 4 Page - Fairchild Semiconductor

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©2005 Fairchild Semiconductor Corporation
www.fairchildsemi.com
TIL111M, TIL117M, MOC8100M Rev. 1.0.2
4
Electrical Characteristics (Continued) (T
A = 25°C unless otherwise specified.)
Transfer Characteristics
Isolation Characteristics
*All Typical values at TA = 25°C
Symbol
Parameter
Test Conditions
Device
Min
Typ*
Max
Unit
DC CHARACTERISTICS
CTRCE
Current Transfer Ratio,
Collector to Emitter
IF = 10mA, VCE = 10V
TIL117M
50
%
IF = 1mA, VCE = 5V
MOC8100M
50
%
IF = 1mA, VCE = 5V,
TA = 0°C to +70°C
30
IC(ON)
On-State Collector Current
(Phototransistor Operation)
IF = 16mA, VCE = 0.4V
TIL111M
2
mA
On-State Collector Current
(Photodiode Operation)
IF = 16mA, VCB = 0.4V
7
µA
VCE (SAT) Collector-Emitter Saturation
Voltage
IC = 500µA, IF = 10mA
TIL117M
0.4
V
IC = 2mA, IF = 16mA
TIL111M
0.4
IC = 100µA, IF = 1mA
MOC8100M
0.5
AC CHARACTERISTICS
TON
Turn-On Time
IC = 2mA, VCC = 10V,
RL = 100Ω (Fig. 11)
MOC8100M
20
µs
TIL117M
10
TOFF
Turn-Off Time
MOC8100M
20
µs
TIL117M
10
tr
Rise Time
MOC8100M
TIL117M
2µs
tf
Fall Time
2
tr
Rise Time
(Phototransistor Operation)
IC(ON) = 2mA, VCC = 10V,
RL = 100Ω (Fig. 11)
TIL111M
10
µs
tf
Fall Time
(Phototransistor Operation)
Symbol
Characteristic
Test Conditions
Min.
Typ.*
Max.
Units
VISO
Input-Output Isolation Voltage
f = 60Hz, t = 1 sec.
7500
VAC(rms)
RISO
Isolation Resistance
VI-O = 500 VDC
1011
CISO
Isolation Capacitance
VI-O = 0, f = 1MHz
0.2
pF


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