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TIL111TM Datasheet(PDF) 4 Page - Fairchild Semiconductor |
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TIL111TM Datasheet(HTML) 4 Page - Fairchild Semiconductor |
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4 / 11 page  ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com TIL111M, TIL117M, MOC8100M Rev. 1.0.2 4 Electrical Characteristics (Continued) (T A = 25°C unless otherwise specified.) Transfer Characteristics Isolation Characteristics *All Typical values at TA = 25°C Symbol Parameter Test Conditions Device Min Typ* Max Unit DC CHARACTERISTICS CTRCE Current Transfer Ratio, Collector to Emitter IF = 10mA, VCE = 10V TIL117M 50 % IF = 1mA, VCE = 5V MOC8100M 50 % IF = 1mA, VCE = 5V, TA = 0°C to +70°C 30 IC(ON) On-State Collector Current (Phototransistor Operation) IF = 16mA, VCE = 0.4V TIL111M 2 mA On-State Collector Current (Photodiode Operation) IF = 16mA, VCB = 0.4V 7 µA VCE (SAT) Collector-Emitter Saturation Voltage IC = 500µA, IF = 10mA TIL117M 0.4 V IC = 2mA, IF = 16mA TIL111M 0.4 IC = 100µA, IF = 1mA MOC8100M 0.5 AC CHARACTERISTICS TON Turn-On Time IC = 2mA, VCC = 10V, RL = 100Ω (Fig. 11) MOC8100M 20 µs TIL117M 10 TOFF Turn-Off Time MOC8100M 20 µs TIL117M 10 tr Rise Time MOC8100M TIL117M 2µs tf Fall Time 2 tr Rise Time (Phototransistor Operation) IC(ON) = 2mA, VCC = 10V, RL = 100Ω (Fig. 11) TIL111M 10 µs tf Fall Time (Phototransistor Operation) Symbol Characteristic Test Conditions Min. Typ.* Max. Units VISO Input-Output Isolation Voltage f = 60Hz, t = 1 sec. 7500 VAC(rms) RISO Isolation Resistance VI-O = 500 VDC 1011 Ω CISO Isolation Capacitance VI-O = 0, f = 1MHz 0.2 pF |
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Similar Description - TIL111TM |
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