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BUJ105AD Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. BUJ105AD
Description  Silicon diffused power transistor
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Maker  NXP [NXP Semiconductors]
Homepage  http://www.nxp.com
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BUJ105AD Datasheet(HTML) 3 Page - NXP Semiconductors

 
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9397 750 14196
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 14 December 2004
3 of 12
Philips Semiconductors
BUJ105AD
Silicon diffused power transistor
5.
Thermal characteristics
[1]
Device mounted on a printed-circuit board; minimum footprint
6.
Characteristics
Table 4:
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance from junction to mounting base
see Figure 2
-
-
1.56
K/W
Rth(j-a)
thermal resistance from junction to ambient
[1] -
75
-
K/W
Fig 2.
Transient thermal impedance from junction to mounting base as a function of pulse duration
001aab998
tp (s)
10−5
110
10−1
10−2
10−4
10−3
1
10−1
10
Zth(j-mb)
(K/W)
10−2
δ = 0.5
0.2
0.1
tp
tp
T
Ptot
t
T
δ =
0.01
0.05
0.02
Table 5:
Characteristics
Tmb = 25 °C; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
ICES
collector-emitter cut-off current
VBE = 0 V; VCE = VCESMmax
[1] -
-
0.2
mA
VBE = 0 V; VCE = VCESMmax; Tj = 125 °C
[1] -
-
0.5
mA
ICBO
collector-base cut-off current
VBE = 0 V; VCE = VCESMmax
[1] -
-
0.2
mA
ICEO
collector-emitter cut-off current
VCEO = VCEOMmax = 400 V
[1] -
-
0.1
mA
IEBO
emitter-base cut-off current
VEB = 9 V; IC = 0 A
-
-
1
mA
VCEOsus
collector-emitter sustaining
voltage
IB = 0 A; IC = 10 mA; L = 25 mH;
see Figure 3 and 4
400
-
-
V
VCEsat
collector-emitter saturation
voltage
IC = 4.0 A; IB = 0.8 A; see Figure 11
-
0.3
1.0
V
VBEsat
base-emitter saturation voltage
IC = 4.0 A; IB = 0.8 A; see Figure 12
-
1.0
1.5
V
hFE
DC current gain
IC = 1 mA; VCE = 5 V
10
14
34
IC = 500 mA; VCE = 5 V; see Figure 10
13
23
36
hFEsat
DC saturation current gain
IC = 4.0 A; VCE = 5 V
8
11
15


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