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PBLS2001S Datasheet(PDF) 9 Page - NXP Semiconductors |
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PBLS2001S Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 16 page PBLS2001S_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 24 August 2009 9 of 16 NXP Semiconductors PBLS2001S 20 V PNP BISS loadswitch IC/IB =20 (1) Tamb = 100 °C (2) Tamb =25 °C (3) Tamb = −55 °C Tamb =25 °C (1) IC/IB = 100 (2) IC/IB =50 (3) IC/IB =10 Fig 9. TR1 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values Fig 10. TR1 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values IC/IB =20 (1) Tamb = 100 °C (2) Tamb =25 °C (3) Tamb = −55 °C Tamb =25 °C (1) IC/IB = 100 (2) IC/IB =50 (3) IC/IB =10 Fig 11. TR1 (PNP): Collector-emitter saturation resistance as a function of collector current; typical values Fig 12. TR1 (PNP): Collector-emitter saturation resistance as a function of collector current; typical values 006aaa804 −10−1 −10−2 −1 VCEsat (V) −10−3 IC (mA) −1 −104 −103 −10 −102 (1) (2) (3) 006aaa805 −10−1 −10−2 −1 VCEsat (V) −10−3 IC (mA) −1 −104 −103 −10 −102 (1) (2) (3) 006aaa806 1 10−1 10 RCEsat ( Ω) 10−2 IC (mA) −1 −104 −103 −10 −102 (1) (2) (3) 006aaa807 IC (mA) −1 −104 −103 −10 −102 10−1 1 10 102 RCEsat ( Ω) 10−2 (1) (2) (3) |
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