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BAS101 Datasheet(PDF) 1 Page - NXP Semiconductors |
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BAS101 Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 11 page 1. Product profile 1.1 General description High-voltage switching diodes, encapsulated in a SOT23 small Surface-Mounted Device (SMD) plastic package. 1.2 Features 1.3 Applications 1.4 Quick reference data [1] When switched from IF = 30 mA to IR =30mA; RL = 100 Ω; measured at IR =3mA. BAS101; BAS101S High-voltage switching diodes Rev. 02 — 14 December 2009 Product data sheet Table 1. Product overview Type number Package Configuration NXP JEITA BAS101 SOT23 - single BAS101S SOT23 - dual series High switching speed: trr ≤ 50 ns Low capacitance: Cd ≤ 2pF Low leakage current Reverse voltage: VR ≤ 300 V Repetitive peak reverse voltage: VRRM ≤ 300 V Small SMD plastic package High-speed switching Voltage clamping High-voltage switching Reverse polarity protection Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per diode IF forward current - - 200 mA IR reverse current VR = 250 V - - 150 nA VR reverse voltage - - 300 V trr reverse recovery time [1] --50 ns |
Similar Part No. - BAS101_09 |
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Similar Description - BAS101_09 |
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