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PBSS301NZ Datasheet(PDF) 5 Page - NXP Semiconductors |
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PBSS301NZ Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 14 page PBSS301NZ_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 17 November 2009 5 of 14 NXP Semiconductors PBSS301NZ 12 V, 5.8 A NPN low VCEsat (BISS) transistor FR4 PCB, mounting pad for collector 6 cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values Ceramic PCB, Al2O3, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aaa562 10−5 10 10−2 10−4 102 10−1 tp (s) 10−3 103 1 0.20 δ = 1 0.10 10 1 102 Zth(j-a) (K/W) 10−1 0.05 0.01 0.02 0 0.75 0.50 0.33 006aaa563 10−5 10 10−2 10−4 102 10−1 tp (s) 10−3 103 1 0.10 10 1 102 Zth(j-a) (K/W) 10−1 0.05 0.02 0 0.01 δ = 1 0.75 0.50 0.33 0.20 |
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