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PBSS306PX Datasheet(PDF) 2 Page - NXP Semiconductors |
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PBSS306PX Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 15 page PBSS306PX_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 11 December 2009 2 of 15 NXP Semiconductors PBSS306PX 100 V, 3.7 A PNP low VCEsat (BISS) transistor 2. Pinning information 3. Ordering information 4. Marking [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China Table 2. Pinning Pin Description Simplified outline Symbol 1emitter 2 collector 3base 321 006aaa231 2 1 3 Table 3. Ordering information Type number Package Name Description Version PBSS306PX SC-62 plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89 Table 4. Marking codes Type number Marking code[1] PBSS306PX *5N |
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