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R5F35MB3JFF Datasheet(PDF) 89 Page - Renesas Technology Corp

Part # R5F35MB3JFF
Description  RENESAS MCU
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

R5F35MB3JFF Datasheet(HTML) 89 Page - Renesas Technology Corp

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REJ03B0267-0101
Rev.1.01
Page 89 of 156
Jul 23, 2010
M16C/5M Group, M16C/57 Group
5. Electrical Characteristics
J-Version
5.1.6
E2PROM Emulation Data Flash
Notes:
1.
Definition
of program/erase cycles definition
This value represents the number of erasure per block.
If the flash memory is programmed/erased n times, each block can be erased n times.
i.e. If a word write is performed in different 16 addresses in a block and then the block is erased, it
is considered the programming/erasure is performed just once. However a write in the same
address more than once for one erasure is disabled. (overwrite disabled).
2.
The data hold time includes the periods when the supply voltage is not applied and no clock is
provided.
3.
This data hold time includes (7000) hours in Ambient temperature = 85°C.
4.
Please contact a Renesas Electronics sales office regarding data retention time other than the
above.
Table 5.9
E2PROM Emulation Data Flash Electrical Characteristics
VCC = 3.0 to 5.5 V, VSS = 0 V, and Topr = -40°C to 85°C unless otherwise specified.
Symbol
Characteristic
Value
Unit
Min.
Typ.
Max.
Program/erase cycles (1)
100000
times
Word program time (2-byte program)
100
2000
µs
Read time (2-byte read)
1
µs
Block erase time (32-byte block)
15
200
ms
tPS
Flash memory circuit stabilization wait time
(sleep mode to normal mode)
50
µs
Data hold time (2)
Ambient temperature = 55°C (3, 4)
20
years


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