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R5F35MC3KFE Datasheet(PDF) 87 Page - Renesas Technology Corp |
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R5F35MC3KFE Datasheet(HTML) 87 Page - Renesas Technology Corp |
87 / 159 page REJ03B0267-0101 Rev.1.01 Page 87 of 156 Jul 23, 2010 M16C/5M Group, M16C/57 Group 5. Electrical Characteristics J-Version Notes: 1. Definition of program and erase cycles: The program and erase cycles refer to the number of per-block erasures. If the program and erase cycles are n (n = 1,000), each block can be erased n times. For example, if a 64 Kbyte block is erased after writing two word data 16,384 times, each to a different address, this counts as one program and erase cycles. Data cannot be written to the same address more than once without erasing the block (rewrite prohibited). 2. Cycles to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed). 3. In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential addresses in turn so that as much of the block as possible is used up before performing an erase operation. It is advisable to retain data on the erasure cycles of each block and limit the number of erase operations to a certain number. 4. If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase command at least three times until the erase error does not occur. 5. Customers desiring program/erase failure rate information should contact a Renesas Electronics sales office. 6. The data hold time includes time that the power supply is off or the clock is not supplied. 7. After an erase start or erase restart, if an interval of at least 20 ms is not set before the next suspend request, the erase sequence cannot be completed. Table 5.7 Flash Memory (Program ROM 1, 2) Electrical Characteristics VCC = 3.0 to 5.5 V at Topr = 0°C to 60°C, unless otherwise specified. Symbol Parameter Conditions Standard Unit Min. Typ. Max. - Program/erase cycles (1, 3, 4) VCC = 3.3 V, Topr = 25°C 1,000 (2) times - Two words program time VCC = 3.3 V, Topr = 25°C 150 4000 μs Lock bit program time VCC = 3.3 V, Topr = 25°C 70 3000 μs - Block erase time VCC = 3.3 V, Topr = 25°C 0.2 3.0 s td(SR-SUS) Time delay from suspend request until suspend ms - Interval from erase start/restart until following suspend request 0 μs - Suspend interval necessary for auto-erasure to complete (7) 20 ms - Time from suspend until erase restart μs - Program, erase voltage 3.0 5.5 V - Read voltage Topr = -40 °C to 85°C 3.0 5.5 V - Program, erase temperature 0 60 °C tPS Flash Memory Circuit Stabilization Wait Time 50 μs - Data hold time (6) Ambient temperature = 55 °C 20 year 5 3 f BCLK () ---------------- + 30 1 f BCLK () ---------------- + |
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